1 edition 1.3 august 2004 FLM5359-8F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 42.8 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 32.0 and -4.4 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 3900 5850 - 2000 - -1.0 -2.0 -3.5 -5.0 - - 8.5 9.5 - -36- 38.5 39.5 - v ds = 5v, i ds = 180ma v ds = 5v, i ds = 2200ma v ds = 5v, v gs = 0v i gs = -180 a v ds =10v, i ds = 0.55 i dss (typ.), f = 5.3 ~ 5.9 ghz, z s =z l = 50 ohm f = 5.9 ghz, ? f = 10 mhz 2-tone test p out = 28.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 2200 2600 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 3.0 3.5 c/w r th g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib 10v x i dsr x r th channel temperature rise -- 80 c ? t ch features ?high output power: p 1db = 39.5dbm (typ.) ?high gain: g 1db = 9.5db (typ.) ?high pae: add = 36% (typ.) ?low im 3 = -46dbc@po = 28.5dbm ?broad band: 5.3 ~ 5.9ghz ?impedance matched zin/zout = 50 ? description the FLM5359-8F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance.
2 FLM5359-8F c-band internally matched fet power derating curve 20 40 50 30 10 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power & im 3 vs. input power v ds =10v f 1 = 5.9 ghz f 2 = 5.91 ghz 2-tone test 16 18 20 22 24 input power (s.c.l.) (dbm) s.c.l.: single carrier level 28 30 32 34 26 24 -50 -40 -30 -20 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) output power vs. frequency pin=33.5dbm 23.5dbm 27.5dbm 19.5dbm 5.5 5.3 5.7 5.9 frequency (ghz) 42 38 40 36 34 32 30 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 5.6 ghz 23 19 21 25 27 29 31 33 input power (dbm) 36 38 40 34 32 30 30 45 15 output power (dbm) add p out add (%)
3 FLM5359-8F c-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 10 25 100 250 0.2 0.1 2 4 8 50 ? scale for |s 21 | 6 5.1ghz 5.1ghz 5.3 5.3 6.1 6.1 5.5 5.5 5.7 5.9 5.7 5.9 scale for |s 12 | 5.1ghz 5.1ghz 5.3 5.3 6.1 6.1 5.5 5.5 5.7 5.7 5.9 5.9 s-parameters v ds = 10v, i ds = 2200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 5100 .436 57.3 3.020 37.7 .048 -5.7 .596 -5.3 5200 .439 46.6 3.090 23.2 .053 -20.0 .548 -15.2 5300 .436 35.7 3.162 8.3 .058 -33.6 .500 -25.2 5400 .417 21.8 3.217 -6.8 .065 -45.7 .442 -35.1 5500 .385 6.8 3.228 -22.6 .067 -58.8 .382 -47.6 5600 .339 -13.3 3.229 -39.2 .073 -72.3 .322 -63.6 5700 .282 -38.2 3.242 -56.6 .079 -83.7 .278 -83.6 5800 .247 -75.8 3.220 -75.1 .083 -98.1 .241 -108.0 5900 .251 -122.5 3.191 -94.5 .084 -112.8 .216 -140.2 6000 .334 -162.8 3.053 -114.3 .083 -126.5 .230 -177.1 6100 .447 167.3 2.796 -134.3 .081 -140.0 .287 153.2
4 FLM5359-8F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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